SPLITTING OF THE F2 BANDS IN ION-IMPLANTED LIF

被引：3
|
作者：
WOOD, RA
TOWNSEND, PD
机构：
[1] MAPS, University of Sussex, Brighton
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1991年 / 59卷 / pt 2期
关键词：
D O I：
10.1016/0168-583X(91)95824-W
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Optical absorption studies of ion-implanted LiF, after annealing, show the growth of a band at 414 nm (3 eV), whose behaviour is similar to that of the F2 band at 445 nm (2.8 eV). This band is attributed to the association of F2 centres with an impurity, deforming the normal F2 centre structure. Details of the deformation are presented. In situ measurements during implantation at 77 or 300 K do not show this new absorption feature, but the implant temperature influences the subsequent 414 nm band production.
引用
收藏
页码：1331 / 1335
页数：5
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