GERMANIUM AS A DEEP LEVEL IN ALXGA1-XAS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY

被引：0
|
作者：
GREEN, RT [1 ]
LEE, WI [1 ]
机构：
[1] VARIAN RES CTR,PALO ALTO,CA 94303
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1990年 / 19卷 / 07期
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
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页码：43 / 43
页数：1
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