GERMANIUM AS A DEEP LEVEL IN ALXGA1-XAS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY

被引：0

作者：

GREEN, RT ^{[1
]}

LEE, WI ^{[1
]}

机构：

[1] VARIAN RES CTR,PALO ALTO,CA 94303

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1990年 / 19卷 / 07期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：43 / 43

页数：1

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[1] GERMANIUM AS A DEEP LEVEL IN ALXGA1-XAS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
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[J]. JOURNAL OF ELECTRONIC MATERIALS, 1991, 20 (08) : 583 - 587
[2] DEEP ELECTRON TRAPS IN ORGANOMETALLIC VAPOR-PHASE GROWN ALXGA1-XAS
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[J]. JOURNAL OF APPLIED PHYSICS, 1997, 81 (11) : 7533 - 7539
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[10] Structural and optical characterization of AlxGa1-xAs grown at low temperatures by organometallic vapor phase epitaxy
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