DEPTH PROFILING OF DEFECTS IN A-SIH FILMS BY MEANS OF MODULATED PHOTOCURRENT

被引：3
|
作者：
AMATO, G [1 ]
GIORGIS, F [1 ]
FIZZOTTI, F [1 ]
MANFREDOTTI, C [1 ]
机构：
[1] UNIV TURIN,DEPT EXPTL PHYS,I-10125 TURIN,ITALY
来源：
SOLID STATE COMMUNICATIONS | 1993年 / 86卷 / 05期
关键词：
D O I：
10.1016/0038-1098(93)90372-T
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
This work reports about experimental findings obtained by means of Modulated Photocurrent (MPC) spectroscopy as applied to a-Si:H films in sandwich configuration. The gap density of states from 0.4 to 0.7 eV below the conduction band edge has been recontructed for three excitation wavelengths. This allows for a spatial depth profiling of unoccupied defects. It is shown that the defects peak apparently shifts towards midgap when probing the region near a-Si:H-metal interface. This result is interpreted by means of two different models. The likelihood of these models is discussed by comparing the results with other spectroscopic data.
引用
收藏
页码：277 / 280
页数：4
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