MATERIALS ANALYSIS USING ION-BEAM TECHNIQUES

被引：11
|
作者：
BOERMA, DO [1 ]
机构：
[1] UNIV GRONINGEN,CTR MAT SCI,9718 CM GRONINGEN,NETHERLANDS
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1990年 / 50卷 / 1-4期
关键词：
D O I：
10.1016/0168-583X(90)90335-R
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Basic concepts of ion beam analysis techniques for the study of the composition and structure of surfaces, interfaces and thin layers are reviewed. For surface characterization the use of low-energy (1-20 keV) ions is compared with the use of medium-energy (50-200 keV) and high-energy (200 keV-several MeV) ions. Thin-layer analysis with Rutherford backscattering (RBS) and nuclear reaction analysis in combination with channeling is described in detail. Requirements, including the necessary precision demands, for the instrumentation are discussed. The analysis via computer simulations of channeling data, in particular of data for the determination of lattice sites of solute atoms in single crystals, will be treated. As an illustration of the potential of ion beam techniques for structure analysis, a number of examples of lattice site locations is presented. © 1990.
引用
收藏
页码：77 / 90
页数：14
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