APPLICATION OF ELECTRON AND ION-BEAM ANALYSIS TECHNIQUES TO MICROELECTRONICS

被引：2

作者：

KUAN, TS ^{[1
]}

BATSON, PE ^{[1
]}

FEENSTRA, RM ^{[1
]}

SLAVIN, AJ ^{[1
]}

TROMP, RM ^{[1
]}

机构：

[1] TRENT UNIV,DEPT PHYS,PETERBOROUGH K9J 6Y3,ONTARIO,CANADA

来源：

IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 1992年 / 36卷 / 02期

关键词：

D O I：

10.1147/rd.362.0183

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

The application of electron microscopy, scanning tunneling microscopy, and medium-energy ion scattering to microelectronics is reviewed. These analysis techniques are playing an important role in advancing the technology. Their use in the study of relevant phenomena regarding surfaces, interfaces, and defects is discussed. Recent developments and applications are illustrated using results obtained at the IBM Thomas J. Watson Research Center. Potential advances in the techniques are also discussed.

引用

页码：183 / 207

页数：25

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