DEPENDENCE ON UNIAXIAL-STRESS OF DEEP LEVELS IN III-V-COMPOUND AND GROUP-IV ELEMENTAL SEMICONDUCTORS

被引：4

作者：

JENKINS, DW ^{[1
]}

REN, SY ^{[1
]}

DOW, JD ^{[1
]}

机构：

[1] UNIV NOTRE DAME,DEPT PHYS,NOTRE DAME,IN 46556

来源：

PHYSICAL REVIEW B | 1989年 / 39卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.39.7881

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：7881 / 7894

页数：14

共 26 条

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[7] 3RD-ORDER NONLINEAR-OPTICAL SUSCEPTIBILITIES OF GROUP-IV AND GROUP-III-V COMPOUND SEMICONDUCTORS
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[10] ELECTRONIC-PROPERTIES OF (211) SURFACES OF GROUP-IV AND III-V SEMICONDUCTORS
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