共 50 条
- [2] DEPENDENCE ON UNIAXIAL-STRESS OF DEEP LEVELS IN III-V-COMPOUND AND GROUP-IV ELEMENTAL SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1989, 39 (11): : 7881 - 7894
- [3] PIEZOSPECTROSCOPY OF SINGLE AND DOUBLE ACCEPTORS IN GROUP-IV SEMICONDUCTORS [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1974, 64 (01): : 11 - 28
- [5] GROUP THEORETICAL STUDY OF DOUBLE ACCEPTORS IN SEMICONDUCTORS [J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1973, 18 (03): : 324 - 324
- [6] THEORY OF THE PIEZO-ZEEMAN EFFECT FOR SHALLOW ACCEPTORS IN GROUP-IV SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1993, 48 (08): : 5127 - 5147
- [7] Neutral vacancies in group-IV semiconductors [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1998, 210 (01): : 13 - 29
- [8] Group-IV semiconductors at the nanoscale Preface [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2016, 213 (11): : 2861 - 2861
- [9] Surfaces and interfaces of group-IV semiconductors [J]. Beijing Daxue Xuebao Ziran Kexue Ban, 2-3 (159-166):
- [10] THEORY OF MELTING IN GROUP-IV SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1975, 11 (08): : 2979 - 2989