SPATIAL-DISTRIBUTION OF 4-VACANCY COMPLEXES IN SILICON IRRADIATED WITH OXYGEN IONS

被引：0
|
作者：
AKKERMAN, AF [1 ]
BOTVIN, VA [1 ]
CHUBISOV, MA [1 ]
机构：
[1] ACAD SCI KASSR,HIGH ENERGY PHYS INST,ALMA ATA,KASSR
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1975年 / 9卷 / 09期
关键词：
D O I：
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
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页码：1212 / 1213
页数：2
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