A simulation of alternating-current thin-film electroluminescent device operation with positive space charge present in the phosphor layer of the device is presented. The simulation is based on modeling the space-charge distribution using a single-sheet charge model. The simulation is performed for two cases of space-charge creation: by impact ionization of deep levels in the phosphor or by field emission from traps in the phosphor. Results of the simulation show that space-charge creation by either mechanism is capable of causing overshoot in both capacitance-voltage and internal charge-phosphor field (Q-F-p) plots. (C) 1995 American Institute of Physics.
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Korea Inst Sci & Technol, Informat Display & Nano Devices Lab, Seoul 130650, South KoreaKorea Inst Sci & Technol, Informat Display & Nano Devices Lab, Seoul 130650, South Korea
Lee, YH
Ju, BK
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机构:Korea Inst Sci & Technol, Informat Display & Nano Devices Lab, Seoul 130650, South Korea
Ju, BK
Kim, DH
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机构:Korea Inst Sci & Technol, Informat Display & Nano Devices Lab, Seoul 130650, South Korea
Kim, DH
Oh, MH
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机构:Korea Inst Sci & Technol, Informat Display & Nano Devices Lab, Seoul 130650, South Korea