STRUCTURAL OPTIMIZATION FOR SINGLE JUNCTION INGAP SOLAR-CELLS

被引：42
|
作者：
TAKAMOTO, T
IKEDA, E
KURITA, H
OHMORI, M
机构：
[1] Research and Development Division, Central Research Laboratory, Japan Energy Corporation 3-17-35, Saitama, 335, Niizo-minami, Toda-si
来源：
SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1994年 / 35卷 / 1-4期
关键词：
D O I：
10.1016/0927-0248(94)90118-X
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
As the first step to develop an InGaP/Si tandem solar cell, we tried to fabricate a high efficiency In0.5Ga0.5P single junction cell on a GaAs substrate by metalorganic chemical vapor deposition method. We optimized the cell structure taking account the minority carrier lifetime. A long minority carrier lifetime of over 10 ns was obtained with improved growth condition, and a maximum conversion efficiency of 17.4% was achieved.
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页码：25 / 31
页数：7
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