A SELF-ALIGNED LATERAL BIPOLAR-TRANSISTOR REALIZED ON SIMOX-MATERIAL

被引：20
|
作者：
EDHOLM, B
OLSSON, J
SODERBARG, A
机构：
[1] Department of Electronics Technology, Uppsala University, Uppsala
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1993年 / 40卷 / 12期
关键词：
D O I：
10.1109/16.249487
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Lateral bipolar transistors, compatible with CMOS process on SOI, have been fabricated on high quality SIMOX-material. A self-aligned nitride spacer technique is used for base width definition and for emitter alignment. Current gains of 40, and high collector-emitter breakdown voltages, have been obtained for transistors with base widths of 4000 Angstrom.
引用
收藏
页码：2359 / 2360
页数：2
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