EXTERNAL GRATING TUNABLE MQW LASER WITH WIDE TUNING RANGE OF 240 NM

被引：47
|
作者：
TABUCHI, H
ISHIKAWA, H
机构：
[1] Fujitsu Laboratories, Atsugi, 243-01, 10-1, Morinosato-Wakamiya
来源：
ELECTRONICS LETTERS | 1990年 / 26卷 / 11期
关键词：
Lasers and laser applications; Semiconductor laser; Tuning;
D O I：
10.1049/el:19900484
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A very wide tuning range in an external grating tunable InGaAs/InGaAsP MQW laser is demonstrated. Second subband recombination occurs in MQW diode at high current density injection. This contributes to gainexpansion and a tuning range of 240 nm was obtained when operated continuously (CW) atroom temperature. © 1990, The Institution of Electrical Engineers. All rights reserved.
引用
收藏
页码：742 / 743
页数：2
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