A COMPARISON OF DIFFERENT MESFET CONFIGURATIONS IN TERMS OF MICROWAVE PERFORMANCE

被引:0
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作者
TRAUT, FA
VANDERMERWE, DG
SNYMAN, LW
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O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
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07 ; 0710 ; 09 ;
摘要
Performance characteristics and models were derived for three different MESFET configurations which were fabricated using mid-UV contact lithography and electron beam lithography. The transistors are suitable for application in 1-26 GHz monolithic microwave integrated circuits. The effect of gate width scaling was also investigated and the most effective configuration layout derived. The empirically obtained data can be used as a data base in the design of monolithic microwave integrated circuits.
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页码:113 / 116
页数:4
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