A COMPARISON OF DIFFERENT MESFET CONFIGURATIONS IN TERMS OF MICROWAVE PERFORMANCE

被引：0
|
作者：
TRAUT, FA
VANDERMERWE, DG
SNYMAN, LW
机构：
来源：
SOUTH AFRICAN JOURNAL OF SCIENCE | 1991年 / 87卷 / 3-4期
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D O I：
暂无
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
Performance characteristics and models were derived for three different MESFET configurations which were fabricated using mid-UV contact lithography and electron beam lithography. The transistors are suitable for application in 1-26 GHz monolithic microwave integrated circuits. The effect of gate width scaling was also investigated and the most effective configuration layout derived. The empirically obtained data can be used as a data base in the design of monolithic microwave integrated circuits.
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页码：113 / 116
页数：4
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