HOLE-SUBBAND-ORDER REVERSAL IN GAAS/INXAL1-XAS STRAINED-LAYER SUPERLATTICES INVESTIGATED BY PHOTOREFLECTANCE SPECTROSCOPY

被引：0
|
作者：
NAKAYAMA, M
DOGUCHI, T
TANAKA, I
NISHIMURA, H
机构：
[1] Department of Applied Physics, Faculty of Engineering, Osaka City University, Sumiyoshi-ku, Osaka, 558, Sugimoto
来源：
SUPERLATTICES AND MICROSTRUCTURES | 1992年 / 12卷 / 03期
关键词：
D O I：
10.1016/0749-6036(92)90276-B
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We have measured photoreflectance (PR) spectra of the exciton transitions associated with the n=1 electron and hole subbands in GaAs (dG) In0.2Al0.8As(dI) strained-layer superlattices with dG=dI of 10, 40, and 100 Å and a GaAs (100 Å)/AlAs (100 Å) superlattice to investigate the hole-subband order. The PR-intensity profiles of the heavy-hole and light-hole excitons demonstrate that the order of the n=1 heavy-hole and light-hole subbands is changed by the In concentration (strain effects) and the layer thickness (quantum-size effects). We have analyzed the experimental results according to an effective-mass approximation including strain effects. © 1992.
引用
收藏
页码：333 / 336
页数：4
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