PHOTOEMISSION-STUDIES OF AMORPHOUS-SEMICONDUCTOR HETEROJUNCTIONS

被引:51
|
作者
EVANGELISTI, F
机构
关键词
D O I
10.1016/0022-3093(85)90823-3
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:969 / 977
页数:9
相关论文
共 50 条
  • [21] STRUCTURE OF HYDROGENATED SI-GE AND SI-SINX AMORPHOUS-SEMICONDUCTOR HETEROJUNCTIONS
    SETTE, F
    ABELES, B
    YANG, L
    MCDOWELL, A
    NORMAN, D
    RICHARDSON, CH
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 : 895 - 898
  • [22] AMORPHOUS-SEMICONDUCTOR DEVICES AND COMPONENTS
    ALLISON, J
    THOMPSON, MJ
    RADIO AND ELECTRONIC ENGINEER, 1976, 46 (01): : 11 - 22
  • [23] INTERPRETATION OF TUNNELLING INTO AN AMORPHOUS-SEMICONDUCTOR
    WOLF, EL
    THIN SOLID FILMS, 1975, 28 (02) : 213 - 217
  • [24] PHONONS IN AMORPHOUS-SEMICONDUCTOR SUPERLATTICES
    MALEY, N
    LANNIN, JS
    PHYSICAL REVIEW B, 1985, 31 (08): : 5577 - 5579
  • [25] CHALCOGENIDE AMORPHOUS-SEMICONDUCTOR DIODES
    OKANO, S
    SUZUKI, M
    IMURA, T
    HIRAKI, A
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (06): : L445 - L448
  • [26] MULTISTATE AMORPHOUS-SEMICONDUCTOR SWITCH
    COLDREN, LA
    BOSCH, MA
    RENTSCHLER, JA
    APPLIED PHYSICS LETTERS, 1980, 36 (08) : 688 - 690
  • [27] AMORPHOUS-SEMICONDUCTOR SWITCHING IN MELANINS
    MCGINNESS, J
    CORRY, P
    PROCTOR, P
    SCIENCE, 1974, 183 (4127) : 853 - 855
  • [28] DIFFUSION RECOMBINATION IN AN AMORPHOUS-SEMICONDUCTOR
    YUSHKA, G
    TOMASHYUNAS, R
    YUKONIS, G
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (10): : 1158 - 1161
  • [29] PHOTOEMISSION-STUDIES ON INSITU PREPARED HYDROGENATED AMORPHOUS-SILICON FILMS
    VONROEDERN, B
    LEY, L
    CARDONA, M
    SMITH, FW
    PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1979, 40 (06): : 433 - 450
  • [30] PHOTOEMISSION-STUDIES OF SEMICONDUCTOR INTERFACES - ELECTRONIC-STRUCTURE AND BARRIER HEIGHTS
    HORN, K
    SURFACE SCIENCE, 1992, 269 : 938 - 952