ANOMALOUS PUNCHTHROUGH IN ULSI BURIED-CHANNEL MOSFETS

被引：8
|
作者：
SKOTNICKI, T
MERCKEL, G
PEDRON, T
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 11期
关键词：
D O I：
10.1109/16.43679
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：2548 / 2556
页数：9
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