THE SCIENCE AND ENGINEERING OF LARGE-DIAMETER CZOCHRALSKI SILICON CRYSTAL-GROWTH

被引：0

|

作者：

LIN, W

BENSON, KE

机构：

来源：

ANNUAL REVIEW OF MATERIALS SCIENCE | 1987年 / 17卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：273 / 298

页数：26

相关论文

共 50 条

[1] Nickel precipitation in large-diameter Czochralski silicon
Xi, ZQ
Yang, DR
Chen, J
Que, DL
Moeller, HJ
[J]. PHYSICA B-CONDENSED MATTER, 2004, 344 (1-4) : 407 - 412
[2] Copper precipitation in large-diameter Czochralski silicon
Xi, ZQ
Chen, J
Yang, DR
Lawerenz, A
Moeller, HJ
[J]. JOURNAL OF APPLIED PHYSICS, 2005, 97 (09)
[3] DEVELOPMENTS IN CZOCHRALSKI SILICON CRYSTAL-GROWTH
MOODY, JW
FREDERICK, RA
[J]. SOLID STATE TECHNOLOGY, 1983, 26 (08) : 221 - 225
[4] CZOCHRALSKI SILICON CRYSTAL-GROWTH AND CHARACTERIZATION
DAIDO, K
SHINOYAMA, S
INOUE, N
[J]. REVIEW OF THE ELECTRICAL COMMUNICATIONS LABORATORIES, 1979, 27 (1-2): : 33 - 40
[5] THE EFFECT OF GROWTH-RATE, DIAMETER AND IMPURITY CONCENTRATION ON STRUCTURE IN CZOCHRALSKI SILICON CRYSTAL-GROWTH
DIGGES, TG
SHIMA, R
[J]. JOURNAL OF CRYSTAL GROWTH, 1980, 50 (04) : 865 - 869
[6] CONTROL OF DIAMETER IN CZOCHRALSKI AND RELATED CRYSTAL-GROWTH TECHNIQUES
HURLE, DTJ
[J]. JOURNAL OF CRYSTAL GROWTH, 1977, 42 (DEC) : 473 - 482
[7] CZOCHRALSKI SILICON CRYSTAL-GROWTH AT REDUCED PRESSURES
CHARTIER, CP
SIBLEY, CB
[J]. SOLID STATE TECHNOLOGY, 1975, 18 (02) : 31 - 33
[8] A VERSATILE CZOCHRALSKI CRYSTAL-GROWTH SYSTEM WITH AUTOMATIC DIAMETER CONTROL
AGGARWAL, MD
METZL, R
WANG, WS
CHOI, J
[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1995, 66 (07): : 3939 - 3942
[9] DIGITAL-CONTROL OF CZOCHRALSKI SILICON CRYSTAL-GROWTH
KIM, KM
KRAN, A
RIEDLING, K
SMETANA, P
[J]. SOLID STATE TECHNOLOGY, 1985, 28 (01) : 165 - 168
[10] HEAT-TRANSFER IN SILICON CZOCHRALSKI CRYSTAL-GROWTH
WILLIAMS, G
REUSSER, RE
[J]. JOURNAL OF CRYSTAL GROWTH, 1983, 64 (03) : 448 - 460

← 1 2 3 4 5 →