INFLUENCE OF GROWTH-CONDITIONS ON UNDOPED AND SULFUR-DOPED INP GROWN BY MOLECULAR-BEAM EPITAXY

被引：11

作者：

ILIADIS, A ^{[1
]}

PRIOR, KA ^{[1
]}

STANLEY, CR ^{[1
]}

MARTIN, T ^{[1
]}

DAVIES, GJ ^{[1
]}

机构：

[1] BRITISH TELECOM RES LABS,IPSWICH IP5 7RE,SUFFOLK,ENGLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 01期

关键词：

D O I：

10.1063/1.337684

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：213 / 218

页数：6

共 50 条

[1] THE INFLUENCE OF GROWTH-CONDITIONS ON SULFUR INCORPORATION IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY
ANDREWS, DA
HECKINGBOTTOM, R
DAVIES, GJ
JOURNAL OF APPLIED PHYSICS, 1983, 54 (08) : 4421 - 4425
[2] INFLUENCE OF GROWTH-CONDITIONS ON TIN INCORPORATION IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY
ALEXANDRE, F
RAISIN, C
ABDALLA, MI
BRENAC, A
MASSON, JM
JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) : 4296 - 4304
[3] THE INFLUENCE OF GROWTH-CONDITIONS ON SELENIUM INCORPORATION IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY
ANDREWS, DA
KONG, MY
HECKINGBOTTOM, R
DAVIES, GJ
JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) : 841 - 845
[4] INFLUENCE OF GROWTH-CONDITIONS ON CAPTURE OF ACCIDENTAL IMPURITIES BY UNDOPED EPITAXIAL GAAS FILMS GROWN BY THE MOLECULAR-BEAM EPITAXY METHOD
KOPEV, PS
BER, BY
IVANOV, SV
LEDENTSOV, NN
MELTSER, BY
USTINOV, VM
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (02): : 167 - 169
[5] THE INFLUENCE OF GROWTH-CONDITIONS ON SULFUR AND SELENIUM INCORPORATION IN GA1-XALXAS GROWN BY MOLECULAR-BEAM EPITAXY
ANDREWS, DA
HECKINGBOTTOM, R
DAVIES, GJ
JOURNAL OF APPLIED PHYSICS, 1986, 60 (03) : 1009 - 1014
[6] THE INFLUENCE OF GROWTH-CONDITIONS ON SULFUR AND SELENIUM INCORPORATION IN GA1-XALXAS GROWN BY MOLECULAR-BEAM EPITAXY
DAVIES, GJ
HECKINGBOTTOM, R
ANDREWS, DA
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02): : 186 - 187
[7] THE INFLUENCE OF GROWTH-CONDITIONS ON THE COMPOSITION OF GAINASP GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY
TAPPURA, K
HAKKARAINEN, T
RAKENNUS, K
HOVINEN, M
ASONEN, H
JOURNAL OF CRYSTAL GROWTH, 1991, 112 (01) : 27 - 32
[8] RELATION BETWEEN GROWTH-CONDITIONS AND DEEP LEVELS IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY
XU, HD
ANDERSSON, TG
WESTIN, JM
JOURNAL OF APPLIED PHYSICS, 1987, 62 (05) : 2136 - 2137
[9] PRECISE CONTROL OF HGCDTE GROWTH-CONDITIONS FOR MOLECULAR-BEAM EPITAXY
KAWANO, M
SASAKI, T
ODA, N
JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (05) : 431 - 436
[10] A DETAILED HALL-EFFECT ANALYSIS OF SULFUR-DOPED GALLIUM ANTIMONIDE GROWN BY MOLECULAR-BEAM EPITAXY
LEE, ME
POOLE, I
TRUSCOTT, WS
CLEVERLEY, IR
SINGER, KE
ROHLFING, DM
JOURNAL OF APPLIED PHYSICS, 1990, 68 (01) : 131 - 137

← 1 2 3 4 5 →