IMPLANTATION PROFILES OF O-18 IN AL, SI, MG, AL2O3, MGO AND MGAL2O4

被引：4
|
作者：
ALLEN, WR
LEWIS, MB
机构：
[1] Metals and Ceramics Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6376
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1990年 / 51卷 / 04期
关键词：
D O I：
10.1016/0168-583X(90)90550-E
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Oxygen of isotopic mass 18 was implanted at energies of 2 MeV, 900 keV and 250 keV into aluminum, silicon, magnesium, aluminum oxide, magnesium oxide and magnesium aluminate spinel. Following implantations near room temperature, implantation profiles of 18O in each material were measured by nuclear reaction analysis using the 18O (p, α) 15N reaction. The mean projected range, range straggling and skewness were extracted from the implantation profiles by statistical analysis and compared with the range moments predicted by the simulation codes TRIM and E-DEP-1. The measured mean projected ranges and range stragglings were found to agree well with the calculated values. Less agreement existed between measured and theoretical values of the skewness. © 1990.
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页码：330 / 338
页数：9
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