BOMBARDMENT-INDUCED COMPOSITIONAL CHANGE IN MGAL2O4, MGO AND AL2O3

被引:0
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作者
MARLETTA, G
IACONA, F
KELLY, R
机构
[1] CNR,IST METODOL & TECNOL MICROELETTRON,I-95125 CATANIA,ITALY
[2] IBM CORP,RES CTR,YORKTOWN HTS,NY 10598
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中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
From a thermodynamic point of view MgAl2O4 (spinel), as well as the simple oxides MgO and Al2O3, should strongly resist bombardment-induced compositional changes. We have explored these three oxides in macroscopic form (i.e. not as thin films) by bombarding atomically clean surfaces held at 400-degrees-C with 8 keV Ar0. The surfaces were examined by X-ray photoelectron spectroscopy (XPS). We found that MgO and Al2O3 were stable to loss of O to within our uncertainties, as indeed they should be, but that spinel underwent a major loss of MgO to yield approximately 0.70 MgO.Al2O3. Furthermore, by varying the angle of photoelectron take-off, it could be shown that the virgin surface of spinel had excess Al while the bombarded surface had excess Mg. This suggests strongly that bombardment-induced segregation (BIS) of MgO occurs with spinel.
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页码:97 / 101
页数:5
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