EFFECT OF LOW-ENERGY AR+ ION-IMPLANTATION ON SILICON SURFACE BARRIERS

被引：6
|
作者：
ASHOK, S
KRAUTLE, H
BENEKING, H
MOGROCAMPERO, A
机构：
[1] RHEIN WESTFAL TH AACHEN, INST SEMICOND ELECTR, D-5100 AACHEN, FED REP GER
[2] GE, CORP RES & DEV, SCHENECTADY, NY 12345 USA
来源：
THIN SOLID FILMS | 1985年 / 126卷 / 3-4期
关键词：
D O I：
10.1016/0040-6090(85)90318-9
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：251 / 256
页数：6
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