SILICON SURFACE-BARRIER MODIFICATION BY LOW-ENERGY NITROGEN ION-IMPLANTATION

被引：1
|
作者：
RINGEL, SA
ASHOK, S
机构：
[1] Pennsylvania State Univ, University, Park, PA, USA, Pennsylvania State Univ, University Park, PA, USA
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 06期
关键词：
LOW-ENERGY NITROGEN ION IMPLANTATION - POOLE-FRENKEL PROCESS - SILICON SURFACE BARRIER MODIFICATION;
D O I：
10.1149/1.2100698
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：1494 / 1499
页数：6
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