STUDY OF THE ELECTRONIC-STRUCTURE AND THE ROLE OF GALLIUM 3D ELECTRONS IN GALLIUM NITRIDE

被引:10
|
作者
JHI, SH [1 ]
IHM, J [1 ]
机构
[1] SEOUL NATL UNIV, CTR THEORET PHYS, SEOUL 151742, SOUTH KOREA
来源
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 1995年 / 191卷 / 02期
关键词
D O I
10.1002/pssb.2221910213
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Ab-initio pseudopotential total energy calculations are performed for gallium nitride in both wurtzite and zincblende structures. The 3d electrons of gallium are treated as valence states and the behavior of the 3d electrons and their influence on higher-lying valence states are investigated. It is found that the explicit treatment of the gallium 3d electrons as interacting valence states rather than inert core states systematically improves various structural and electronic properties.
引用
收藏
页码:387 / 394
页数:8
相关论文
共 50 条
  • [41] Distributions of conduction electrons as manifested in MAS NMR of gallium nitride
    Yesinowski, JP
    Purdy, AP
    Wu, HQ
    Spencer, MG
    Hunting, J
    DiSalvo, FJ
    JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2006, 128 (15) : 4952 - 4953
  • [42] First principles study of structural, electronic and optical properties of indium gallium nitride arsenide lattice matched to gallium arsenide
    Ziane, Mohamed Issam
    Bensaad, Zouaoui
    Ouahrani, Tarik
    Bennacer, Hamza
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2015, 30 : 181 - 196
  • [43] ELECTRONIC-STRUCTURE OF POLYSULFUR NITRIDE
    RUDGE, WE
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1975, 20 (03): : 359 - 360
  • [44] STUDY OF ELASTIC PROPERTIES OF GALLIUM NITRIDE
    SAVASTENKO, VA
    SHELEG, AU
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 48 (02): : K135 - K139
  • [45] Controlled growth and electronic properties of gallium nitride nanowires
    Han, S
    Jin, W
    Tang, T
    Li, C
    Zhang, DH
    Liu, XL
    Zhou, CW
    UNCONVENTIONAL APPROACHES TO NANOSTRUCTURES WITH APPLICATIONS IN ELECTRONICS, PHOTONICS, INFORMATION STORAGE AND SENSING, 2003, 776 : 137 - 142
  • [46] Metallurgical study of contacts to gallium nitride
    Mohney, SE
    Luther, BP
    Jackson, TN
    Khan, MA
    GALLIUM NITRIDE AND RELATED MATERIALS, 1996, 395 : 843 - 848
  • [47] Gallium Nitride Power Electronic Devices and Circuits: A Review
    Town, Graham E.
    2015 IEEE 11TH INTERNATIONAL CONFERENCE ON POWER ELECTRONICS AND DRIVE SYSTEMS (PEDS 2015), 2015, : 1 - 3
  • [48] Electronic properties of arsenic-doped gallium nitride
    Guido, LJ
    Mitev, P
    Gherasimova, M
    Gaffey, B
    APPLIED PHYSICS LETTERS, 1998, 72 (16) : 2005 - 2007
  • [49] Influence of catalysts on the electronic properties of gallium nitride nanomaterials
    Haposan, Tobias
    Suwardy, Joko
    Tjahjana, Liliana
    Saleem, Umar
    Diao, Caozheng
    Tang, Chi Sin
    Yin, Xinmao
    Breese, Mark B. H.
    Wang, Hong
    Birowosuto, Muhammad Danang
    Rusydi, Andrivo
    Arramel
    APPLIED SURFACE SCIENCE, 2025, 686
  • [50] Growth and structure of sputtered gallium nitride films
    Yadav, Brajesh S.
    Major, S. S.
    Srinivasa, R. S.
    JOURNAL OF APPLIED PHYSICS, 2007, 102 (07)