THIN HIGH-QUALITY SILICON DIOXIDE FILMS GROWN BY RAPID THERMAL-PROCESSING

被引：0
|
作者：
NULMAN, J [1 ]
机构：
[1] AG ASSOCIATES,SUNNYVALE,CA 94089
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
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页码：C108 / C109
页数：2
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