COMPUTATION OF THE ENERGY-SPECTRA OF BINARY SEMICONDUCTORS DOPED WITH RARE-EARTH ELEMENTS

被引：0
|
作者：
ILIN, NP
MASTEROV, VF
机构：
来源：
SEMICONDUCTORS | 1995年 / 29卷 / 09期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A method for calculating the structure of the impurity center that arises when a metal atom in the A-site of a III-V binary compound is replaced by a rare-earth atom is formulated using a model Green's function in the framework of the two-band approximation. The conditions under which the charged state (3+) of the rare-earth ion is stabilized and electron and hole trapping levels appear in the band gap of the semiconductor are determined. Ytterbium and erbium impurities in indium phosphide and gallium arsenide are discussed as examples. (C) 1995 American Institute of Physics.
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页码：828 / 833
页数：6
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