TUNNELING SPECTROSCOPY OF LANDAU-LEVELS IN ELECTRON INVERSION-LAYERS ON (100) SI SURFACES

被引：17

作者：

KUNZE, U ^{[1
]}

LAUTZ, G ^{[1
]}

机构：

[1] TECH UNIV BRUNSWICK,HOCHMAGNETFELDANLAGE,D-3300 BRUNSWICK,FED REP GER

来源：

SURFACE SCIENCE | 1984年 / 142卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(84)90328-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：314 / 321

页数：8

共 50 条

[1] HOT-ELECTRON EFFECTS IN LANDAU-LEVELS OF MOS INVERSION-LAYERS
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[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1979, 47 (05) : 1417 - 1425
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