MICROWAVE CAVITY TECHNIQUE FOR STUDYING N-N+ SEMICONDUCTOR STRUCTURES

被引：0
|
作者：
BORODOVSKII, PA
UTKIN, KK
机构：
来源：
INSTRUMENTS AND EXPERIMENTAL TECHNIQUES | 1994年 / 37卷 / 03期
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The end face of a cylinder cavity resonant in the H011 mode is a semiconductor n-n+ structure. Formulas for the resistivity and thickness of the n-layer in terms of measurements of the cavity length and Q-factor with the semiconducting structure turned up and down are suggested. Experimental tests of the technique are reported.
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页码：348 / 350
页数：3
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