MICROWAVE CAVITY TECHNIQUE FOR STUDYING N-N+ SEMICONDUCTOR STRUCTURES

被引：0

作者：

BORODOVSKII, PA

UTKIN, KK

机构：

来源：

INSTRUMENTS AND EXPERIMENTAL TECHNIQUES | 1994年 / 37卷 / 03期

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暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The end face of a cylinder cavity resonant in the H011 mode is a semiconductor n-n+ structure. Formulas for the resistivity and thickness of the n-layer in terms of measurements of the cavity length and Q-factor with the semiconducting structure turned up and down are suggested. Experimental tests of the technique are reported.

引用

页码：348 / 350

页数：3

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