SEMICONDUCTOR INTERFACES STUDIED BY SCANNING TUNNELING MICROSCOPY AND POTENTIOMETRY

被引：10
|
作者：
MURALT, P [1 ]
机构：
[1] IBM CORP,ZURICH RES LAB,CH-8803 RUSCHLIKON,SWITZERLAND
来源：
SURFACE SCIENCE | 1987年 / 181卷 / 1-2期
关键词：
D O I：
10.1016/0039-6028(87)90173-7
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：324 / 332
页数：9
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