PROCESS RAISES CMOS IC ROOF TO 400-V

被引:0
|
作者
PANASUK, C
机构
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:28 / 28
页数:1
相关论文
共 50 条
  • [21] A 400-V/50-kVA Digital-Physical Hybrid Real-Time Simulation Platform for Power Systems
    Mao, Chengxiong
    Leng, Feng
    Li, Junlin
    Zhang, Shuoting
    Zhang, Lidong
    Mo, Ran
    Wang, Dan
    Zeng, Jie
    Chen, Xun
    An, Ranran
    Zhao, Yanjun
    IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 2018, 65 (05) : 3666 - 3676
  • [23] A passive EMI filter for an adjustable-speed motor driven by a 400-V three-level diode-clamped inverter
    Akagi, H
    Tamura, S
    PESC 04: 2004 IEEE 35TH ANNUAL POWER ELECTRONICS SPECIALISTS CONFERENCE, VOLS 1-6, CONFERENCE PROCEEDINGS, 2004, : 86 - 93
  • [24] A 3-V, 0.35-μm CMOS bluetooth receiver IC
    Sheng, WJ
    Xia, B
    Emira, AE
    Xin, CY
    Valero-López, AY
    Moon, ST
    Sánchez-Sinencio, E
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2003, 38 (01) : 30 - 42
  • [25] A 6-20 GHz 400-MHz Modulation-Bandwidth CMOS Transmitter IC
    Saleem, Ali Raza
    Naghavi, Saeed
    Zahra, Mahwish
    Stadius, Kari
    Kosunen, Marko
    Anttila, Lauri
    Valkama, Mikko
    Ryynanen, Jussi
    2022 29TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS AND SYSTEMS (IEEE ICECS 2022), 2022,
  • [26] Embedded 5 V to 3.3 V voltage regulator for supplying digital IC's in 3.3 V CMOS technology
    den Besten, GW
    Nauta, B
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1998, 33 (07) : 956 - 962
  • [27] LINE-VOLTAGE PROCESS RAISES BREAKDOWN WITH V-GROOVE ISOLATION
    GOODENOUGH, F
    ELECTRONIC DESIGN, 1983, 31 (10) : 46 - +
  • [28] NEC, AT-AND-T TO DEVELOP 0.25-MU CMOS IC PROCESS
    PATTON, R
    ELECTRONICS-US, 1993, 66 (22): : 1 - 1
  • [29] High-voltage IC technology: Implemented in a standard submicron CMOS process
    Park, J. M.
    EKC2008: PROCEEDINGS OF THE EU-KOREA CONFERENCE ON SCIENCE AND TECHNOLOGY, 2008, 124 : 383 - 391
  • [30] 500-V TRANSISTORS TEAM WITH 20-V CMOS LOGIC ON JUNCTION-ISOLATED IC
    ANDREWS, W
    ELECTRONIC DESIGN, 1984, 32 (10) : 37 - &