THE USE OF RAPID THERMAL ANNEALING FOR STUDYING TRANSITION-METALS IN SILICON

被引：0
|
作者：
SPARKS, DR [1 ]
CHAPMAN, RG [1 ]
机构：
[1] GM CORP,DELCO ELECTR DIV,DETROIT,MI 48202
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C108 / C108
页数：1
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