MAGNETIC-FIELD INDUCED METAL-INSULATOR TRANSITIONS IN MODULATION-DOPED MULTIPLE-QUANTUM-WELL STRUCTURES

被引：2
|
作者：
WANG, YJ [1 ]
MCCOMBE, BD [1 ]
SCHAFF, W [1 ]
机构：
[1] CORNELL UNIV,ITHACA,NY 14853
来源：
SURFACE SCIENCE | 1992年 / 263卷 / 1-3期
关键词：
D O I：
10.1016/0039-6028(92)90405-U
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The evolution from impurity band conduction, both insulating and metallic, to a "truly metallic" state has been realized by varying magnetic fields applied to a set of 240 angstrom/240 angstrom modulation-doped (Si) GaAs/AlGaAs multiple-quantum-well structures. The transitions were studied with a combination of far infrared magneto-transmission and electrical transport (R(xx) and R(xy)) measurements at magnetic fields up to 9 T and at temperatures between 1.5 and 30 K.
引用
收藏
页码：547 / 548
页数：2
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