INTERSUBBAND RELAXATION IN MODULATION-DOPED MULTIPLE-QUANTUM-WELL STRUCTURES

被引：9
|
作者：
EDUCATO, JL
LEBURTON, JP
机构：
[1] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
[2] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
来源：
PHYSICAL REVIEW B | 1994年 / 49卷 / 03期
关键词：
D O I：
10.1103/PhysRevB.49.2177
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Photoexcited carrier behavior in modulation-doped multiple narrow GaAs-AlxGa1-xAs quantum-well structures which vary in quantum-well width and doping concentration is investigated with Monte Carlo simulations. The model includes scattering of Gamma-valley subband electrons by confined slab and interface-polar-optical phonons and between Gamma-valley and L-valley electrons via optical-deformation-potential phonons. The model closely predicts time constants for electron relaxation found experimentally and shows that the effect of including the L-valley transitions in the Monte Carlo simulation is essential.
引用
收藏
页码：2177 / 2180
页数：4
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