共 50 条
- [43] ULTRATHIN-LAYER (ALAS)M(GAAS)M SUPERLATTICES WITH M = 1,2,3 GROWN BY MOLECULAR-BEAM EPITAXY APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1987, 43 (01): : 75 - 79
- [45] ELECTRONIC-STRUCTURE OF GAAS-ALAS REPEATED HETEROSTRUCTURE BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1977, 22 (03): : 422 - 422
- [46] ELECTRONIC-STRUCTURE OF FREESTANDING (ZNSE)(M)(ZNS)(N)(001) STRAINED-LAYER SUPERLATTICES PHYSICAL REVIEW B, 1994, 50 (20): : 15034 - 15046
- [47] ENERGY-BAND STRUCTURE OF SHORT-PERIOD (001) (ALAS)N(GAAS)N SUPERLATTICES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (02): : 201 - 204
- [50] ULTRATHIN-LAYER (AlAs)m (GaAs)m SUPERLATTICES WITH <M% equals 1,2,3 GROWN BY MOLECULAR BEAM EPITAXY. Applied Physics A: Solids and Surfaces, 1987, A43 (01): : 75 - 79