MATERIAL PARAMETERS IN THICK HYDROGENATED AMORPHOUS-SILICON RADIATION DETECTORS

被引:1
|
作者
QUERESHI, S [1 ]
PEREZMENDEZ, V [1 ]
KAPLAN, SN [1 ]
FUJIEDA, I [1 ]
CHO, G [1 ]
STREET, RA [1 ]
机构
[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
关键词
D O I
10.1016/0022-3093(89)90603-0
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:417 / 419
页数:3
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