共 50 条
- [21] Increase in collector current in hot-electron transistors controlled by gate bias[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2007, 46 (8-11): : L202 - L204Suwa, AkiraKashima, IsseiMiyamoto, YasuyukiFuruya, Kazuhito
- [22] HOT-ELECTRON TRANSISTORS GROWN BY MOCVD[J]. SUPERLATTICES AND MICROSTRUCTURES, 1988, 4 (4-5) : 545 - 549KAWAI, HHASE, IIMANAGA, SKANEKO, KWATANABE, N
- [23] THE GROWTH OF THIN, HEAVILY DOPED LAYERS FOR HOT-ELECTRON DEVICES[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 196 - 198HARRIS, JJWOODCOCK, JM
- [24] BALLISTIC ELECTRON-TRANSPORT ACROSS COLLECTOR BARRIERS IN ALGAAS/GAAS HOT-ELECTRON TRANSISTORS[J]. APPLIED PHYSICS LETTERS, 1988, 52 (15) : 1252 - 1254KUZUHARA, MKIM, KARNOLD, DHESS, K
- [25] RELAXATION OF HOT-ELECTRON DISTRIBUTIONS IN GAAS[J]. PHYSICAL REVIEW B, 1991, 44 (07): : 2969 - 2978KIM, CSSHIZGAL, B
- [26] TRANSPORT IN SILICON MONOLITHIC HOT-ELECTRON STRUCTURES[J]. PHYSICA B & C, 1985, 129 (1-3): : 537 - 541HERBERT, DCKIRTON, MJ
- [27] CURRENT TRANSPORT IN MONOLITHIC HOT-ELECTRON STRUCTURES[J]. THIN SOLID FILMS, 1982, 89 (01) : 21 - 26SHANNON, JMGOLDSMITH, BJ
- [28] Electron energy relaxation in infrared hot-electron transistors[J]. APPLIED PHYSICS LETTERS, 1996, 68 (03) : 358 - 360Choi, KKTidrow, MZChang, WH
- [29] TRANSIENT SIMULATION OF ALGAAS/GAAS/ALGAAS AND ALGAAS/INGAAS/ALGAAS HOT-ELECTRON TRANSISTORS[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (01) : 118 - 123KUZUHARA, MKIM, KHESS, K