MAXIMUM CONCENTRATION OF THERMAL DONORS FORMED AT 450-DEGREES-C IN SILICON IN DEPENDENCE ON THE OXYGEN CONCENTRATION

被引：1

作者：

GAWORZEWSKI, P ^{[1
]}

HILD, E ^{[1
]}

机构：

[1] RES INST TELECOMMUN,H-1525 BUDAPEST,HUNGARY

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1986年 / 94卷 / 01期

关键词：

D O I：

10.1002/pssa.2210940166

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K33 / K38

页数：6

共 50 条

[1] SPECTROSCOPIC STUDIES OF 450-DEGREES-C THERMAL DONORS IN SILICON
PAJOT, B
COMPAIN, H
LEROUILLE, J
CLERJAUD, B
[J]. PHYSICA B & C, 1983, 117 (MAR): : 110 - 112
[2] DEPTH PROFILES OF THERMAL DONORS FORMED AT 450-DEGREES-C IN OXYGEN-RICH N-TYPE SILICON
TOKUDA, Y
KATAYAMA, M
HATTORI, T
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (02) : 163 - 166
[3] THEORETICAL-STUDIES ON THE CORE STRUCTURE OF THE 450-DEGREES-C OXYGEN THERMAL DONORS IN SILICON
DEAK, P
SNYDER, LC
CORBETT, JW
[J]. PHYSICAL REVIEW B, 1992, 45 (20) : 11612 - 11626
[4] ON THE KINETICS OF THERMAL DONORS IN OXYGEN-RICH SILICON IN THE RANGE FROM 450-DEGREES-C TO 900-DEGREES-C
GAWORZEWSKI, P
SCHMALZ, K
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 58 (02): : K223 - K226
[5] SILICON-INTERSTITIAL OXYGEN-INTERSTITIAL COMPLEX AS A MODEL OF THE 450-DEGREES-C OXYGEN THERMAL DONOR IN SILICON
DEAK, P
SNYDER, LC
CORBETT, JW
[J]. PHYSICAL REVIEW LETTERS, 1991, 66 (06) : 747 - 749
[6] THERMAL DONOR FORMATION AND THE LOSS OF OXYGEN FROM SOLUTION IN SILICON HEATED AT 450-DEGREES-C
CLAYBOURN, M
NEWMAN, RC
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (25) : 2139 - 2141
[7] OXYGEN RELATED PHOTOLUMINESCENCE LINES IN 450-DEGREES-C ANNEALED SILICON
HENRY, A
WEMAN, H
MONEMAR, B
[J]. SHALLOW IMPURITIES IN SEMICONDUCTORS 1988, 1989, 95 : 227 - 232
[8] OXYGEN RELATED PHOTOLUMINESCENCE LINES IN 450-DEGREES-C ANNEALED SILICON
HENRY, A
WEMAN, H
MONEMAR, B
[J]. INSTITUTE OF PHYSICS CONFERENCE SERIES, 1989, (95): : 227 - 232
[9] A NEW FAMILY OF THERMAL DONORS GENERATED AROUND 450-DEGREES-C IN PHOSPHORUS-DOPED CZOCHRALSKI SILICON
KAMIURA, Y
HASHIMOTO, F
YONETA, M
[J]. JOURNAL OF APPLIED PHYSICS, 1989, 65 (02) : 600 - 605
[10] CLUSTERING OF OXYGEN-ATOMS IN SILICON AT 450-DEGREES-C - A NEW APPROACH TO THERMAL DONOR FORMATION
LINDSTROM, JL
HALLBERG, T
[J]. PHYSICAL REVIEW LETTERS, 1994, 72 (17) : 2729 - 2732

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