OXYGEN RELATED PHOTOLUMINESCENCE LINES IN 450-DEGREES-C ANNEALED SILICON

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作者：

HENRY, A

WEMAN, H

MONEMAR, B

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SHALLOW IMPURITIES IN SEMICONDUCTORS 1988 | 1989年 / 95卷

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O59 [应用物理学];

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页码：227 / 232

页数：6

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