DOPING PROFILE OPTIMIZATION IN SILICON PERMEABLE BASE TRANSISTORS FOR HIGH-FREQUENCY, HIGH-VOLTAGE OPERATION

被引：0
|
作者：
RATHMAN, DD
HOLLIS, MA
MURPHY, RA
MCWHORTER, AL
MCNAMARA, MJ
机构：
来源：
PROCEEDINGS : IEEE/CORNELL CONFERENCE ON ADVANCED CONCEPTS IN HIGH SPEED SEMICONDUCTOR DEVICES AND CIRCUITS | 1989年
关键词：
D O I：
10.1109/CORNEL.1989.79834
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：185 / 193
页数：9
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