TRANSIT-TIME-INDUCED MICROWAVE NEGATIVE-RESISTANCE IN GA1-XALXAS-GAAS HETEROSTRUCTURE DIODES

被引：15

作者：

SITCH, JE ^{[1
]}

MAJERFELD, A ^{[1
]}

ROBSON, PN ^{[1
]}

HASEGAWA, F ^{[1
]}

机构：

[1] UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,MAPPIN ST,SHEFFIELD S1 3JD,ENGLAND

来源：

ELECTRONICS LETTERS | 1975年 / 11卷 / 19期

关键词：

D O I：

10.1049/el:19750351

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：457 / 458

页数：2

共 11 条

[1] ON THE PROBLEM OF PREDICTING THE RELIABILITY OF GA1-XALXAS-GAAS HETEROSTRUCTURE LASERS
CHERNOUSOV, NP
INOZEMTSEV, KI
BOROSHNEV, AV
[J]. KVANTOVAYA ELEKTRONIKA, 1981, 8 (06): : 1336 - 1338
[2] QUANTUM MAGNETOTUNNELING TIME OF ELECTRONS IN GA1-XALXAS-GAAS SUPERLATTICES
CRUZ, H
HERNANDEZCABRERA, A
MUNOZ, A
[J]. SOLID STATE COMMUNICATIONS, 1991, 79 (09) : 749 - 754
[3] EFFICIENT GAAS-GA1-XALXAS HETEROSTRUCTURE ELECTROLUMINESCENT DIODES
ULMER, EA
[J]. SOLID-STATE ELECTRONICS, 1971, 14 (12) : 1265 - +
[4] OPTIMIZATION OF THE TEMPERATURE-RANGE FOR ACCELERATED TESTING OF GA1-XALXAS-GAAS HETEROSTRUCTURE LASERS
CHERNOUSOV, NP
KRIREL, VG
BOROSHNEV, AV
POLTORATSKII, VM
[J]. KVANTOVAYA ELEKTRONIKA, 1981, 8 (06): : 1334 - 1336
[5] ELECTROLUMINESCENT GAAS-GAXAL1-XAS HETEROSTRUCTURE DIODES WITH NEGATIVE-RESISTANCE AT LOW-TEMPERATURES
BENEKING, H
GATTUNG, A
[J]. ELECTRONICS LETTERS, 1975, 11 (02) : 37 - 38
[6] NATURE OF OPTICALLY INDUCED DEFECTS IN GA1-XALXAS-GAAS DOUBLE-HETEROJUNCTION LASER STRUCTURES
PETROFF, P
JOHNSTON, WD
HARTMAN, RL
[J]. APPLIED PHYSICS LETTERS, 1974, 25 (04) : 226 - 228
[7] PREPARATION AND PROPERTIES OF GA1-XALXAS-GAAS HETEROSTRUCTURE LASERS GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION
DUPUIS, RD
DAPKUS, PD
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (03) : 128 - 135
[8] HIGH-EFFICIENCY GAAS-GA1-XALXAS SINGLE-HETEROSTRUCTURE LIGHT-EMITTING DIODES
LASTRASMARTINEZ, A
CHAMBOULEYRON, I
[J]. SOLID-STATE ELECTRONICS, 1979, 22 (01) : 115 - 116
[9] DARK-LINE DEFECTS INDUCED BY MECHANICAL BENDING IN GAAS-GA1-XALXAS DOUBLE-HETEROSTRUCTURE WAFERS
KISHINO, S
CHINONE, N
NAKASHIMA, H
ITO, R
[J]. APPLIED PHYSICS LETTERS, 1976, 29 (08) : 488 - 490
[10] COMPUTER-AIDED STUDIES ON THE MICROWAVE CHARACTERISTICS OF INP GAINAS AND GAAS GAINAS HETEROSTRUCTURE SINGLE-DRIFT-REGION IMPACT AVALANCHE TRANSIT-TIME DIODES
DASH, GN
PATI, SP
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1994, 27 (08) : 1719 - 1726

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