PREPARATION AND PROPERTIES OF GA1-XALXAS-GAAS HETEROSTRUCTURE LASERS GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION

被引：68

|

作者：

DUPUIS, RD

DAPKUS, PD

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1979年 / 15卷 / 03期

关键词：

D O I：

10.1109/JQE.1979.1069974

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：128 / 135

页数：8

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