SUPERCONDUCTOR FILM GROWTH ON LAGAO3 SUBSTRATES BY LIQUID-PHASE EPITAXY

被引：38
|
作者：
BELT, RF
INGS, J
DIERCKS, G
机构：
[1] Airtron Division, Litton Systems, Inc., Morris Plains, NJ 07950
来源：
APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 18期
关键词：
D O I：
10.1063/1.103222
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Growth conditions and solubility relations were investigated for controlled crystallization of YBa2Cu3O7-x and Bi 2Sr2CaCu2O8+x films from KCl solutions. Applications were made to film growth by liquid phase epitaxy using the dipping process. Epipolished substrates of LaGaO3 with (001) orientations were employed. The micrometer thick films were identified by x ray to be of the correct phases. Furthermore, the polycrystalline films showed a highly preferred orientation with (001) of the films parallel to (001) of LaGaO3. The Bi2Sr2CaCu2O8 film composition was superconducting as-grown with a zero resistance T c of 78 K and a ΔTc of 7 K, while the YBa 2Cu3O7-x films required an oxidation for optimum properties.
引用
收藏
页码：1805 / 1807
页数：3
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