INSITU GROWN SCHOTTKY GATES ON GAAS/ALGAAS HETEROJUNCTIONS

被引：6
|
作者：
TIMMERING, CE
LAGEMAAT, JM
FOXON, CT
HARRIS, JJ
机构：
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1988年 / 3卷 / 11期
关键词：
D O I：
10.1088/0268-1242/3/11/012
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1139 / 1142
页数：4
相关论文
共 50 条
  • [1] IMPACT IONIZATION IN THE ALGAAS LAYER OF GAAS/ALGAAS HETEROJUNCTIONS
    VANHALL, PJ
    ZWAAL, EAE
    SUPERLATTICES AND MICROSTRUCTURES, 1993, 13 (03) : 323 - 328
  • [2] ELECTRONIC PROPERTIES OF GaAs/AlGaAs HETEROJUNCTIONS.
    Marsh, Alan C.
    Inkson, John C.
    1600, (QE-22):
  • [3] THE ELECTRONIC-PROPERTIES OF GAAS ALGAAS HETEROJUNCTIONS
    MARSH, AC
    INKSON, JC
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (01) : 58 - 66
  • [4] Silicon interface layers at GaAs/AlGaAs heterojunctions
    De Franceschi, S
    Altomare, F
    Beltram, F
    Lazzarino, M
    Sorba, L
    Franciosi, A
    JOURNAL OF APPLIED PHYSICS, 1998, 84 (08) : 4637 - 4639
  • [5] AN INVESTIGATION OF MOLECULAR-BEAM EPITAXY INSITU GROWN AG/GAAS SCHOTTKY DIODES
    WANG, YH
    HOUNG, MP
    CHEN, FH
    SZE, PW
    HONG, M
    MANNAERTS, JP
    JOURNAL OF ELECTRONIC MATERIALS, 1992, 21 (09) : 911 - 915
  • [6] ABRUPT HETEROJUNCTIONS OF ALGAAS/GAAS QUANTUM-WELLS GROWN ON (111)A GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY
    YAMAMOTO, T
    FUJII, M
    TAKEBE, T
    LOVELL, D
    KOBAYASHI, K
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1992, (120): : 31 - 36
  • [7] Anomalous current leakage and depletion width control in nanometer scale Schottky gates formed on AlGaAs/GaAs surface
    Jia, R
    Kasai, S
    Hasegawa, H
    COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS, 2005, 184 : 21 - 26
  • [8] LANDAU-LEVEL BROADENING IN GAAS/ALGAAS HETEROJUNCTIONS
    ANDO, T
    MURAYAMA, Y
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1985, 54 (04) : 1519 - 1527
  • [9] Influence of composition in GaAs/AlGaAs heterojunctions on microwave detection
    Asmontas, S
    Gradauskas, J
    Kundrotas, J
    Suziedelis, A
    Silenas, A
    Valusis, G
    ULTRAFAST PHENOMENA IN SEMICONDUCTORS, 1999, 297-2 : 319 - 322
  • [10] Hot electron drift velocity in AlGaAs/ GaAs heterojunctions
    Lasserre, Jean
    Tanimoto, Hiroyoshi
    Taniguchi, Kenji
    Hamaguchi, Chihiro
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1988, 27 pt 1 (06): : 924 - 928
12345