Anomalous current leakage and depletion width control in nanometer scale Schottky gates formed on AlGaAs/GaAs surface

被引：0
|
作者：
Jia, R [1 ]
Kasai, S
Hasegawa, H
机构：
[1] Hokkaido Univ, Res Ctr Integrated Quantum Elect, Sapporo, Hokkaido 060, Japan
[2] Hokkaido Univ, Grad Sch Informat Sci & Technol, Sapporo, Hokkaido 060, Japan
来源：
COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS | 2005年 / 184卷
关键词：
D O I：
暂无
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Investigation of gate control and current-voltage (I-V) characteristics of nanometer scale Schottky electrodes is in an attempt to clarify the possible effects of surface states. HEMT devices having nanometer-sized Schottky gate showed a gate controllability so that the effective gate length was extended, as well as Schottky gate's anomalous I-V characteristics different from the prediction of thermionic emission theory. QWRTrs having an additional side gate exhibited large side-gating effect that was much larger than that by side gate depletion with anomalous side gate leakage current. The origin of obtained gate control anomalies is understood by the high-density surface state charging in gate peripheries that produces strong electric field and induces excess surface state charging by carrier injection from the gate.
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页码：21 / 26
页数：6
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