INFLUENCE OF RADIATION DEFECT FORMATION ON THE DIFFUSION PROFILE OF ALUMINUM IN SILICON SUBJECTED TO ELECTRON-IRRADIATION

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作者：
MAKHKAMOV, S
PAKHARUKOV, YV
YUNUSOV, MS
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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1989年 / 23卷 / 09期
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O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：1042 / 1043
页数：2
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