HIGH-REFLECTANCE GAINP/GAAS DISTRIBUTED-BRAGG-REFLECTOR

被引：6
|
作者：
SAINTCRICQ, B
RUDRA, A
GANIERE, JD
ILEGEMS, M
机构：
[1] Institute for Micro and Optoelectornics, Ecole Polytechnique Fédérate de Lausanne
来源：
ELECTRONICS LETTERS | 1993年 / 29卷 / 21期
关键词：
DISTRIBUTED BRAGG REFLECTOR LASERS; SEMICONDUCTOR LASERS;
D O I：
10.1049/el:19931234
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A high-reflectance GaInP/GaAs distributed Bragg reflector (DBR) was grown by chemical beam epitaxy (CBE). The mirror consists of 40 pairs of alternating layers and was designed for a centre wavelength of 980 nm, resulting in a total thickness of 5.8 mum. Highly stable growth conditions led to a maximum reflectance of 0.99 and to a variation in the centre wavelength of only 5 nm over the 2'' (50.8 mm) wafer. Transmission electron microscopy and X-ray diffraction measurements confirmed the vertical uniformity and the crystallographic quality of the sample.
引用
收藏
页码：1854 / 1855
页数：2
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