LOW THRESHOLD CURRENT INGAAS/GAAS/GAINP LASERS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

被引：30
|
作者：
ZHANG, G
NAPPI, J
VANTTINEN, K
ASONEN, H
PESSA, M
机构：
[1] Department of Physics, Tampere University of Technology, SF-33101 Tampere
来源：
APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 01期
关键词：
D O I：
10.1063/1.107625
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Strained-layer InGaAs/GaAs/GaInP separate confinement heterostructure single-quantum well lasers have been fabricated using gas-source molecular beam epitaxy. A threshold current density as low as 72 A/cm2 was achieved for a broad-area, uncoated Fabry-Perot laser with a cavity length of 1200-mu-m. The internal quantum efficiency and internal waveguide loss were 91% and 8.8 cm-1, respectively. A high characteristic temperature, 140 K, was obtained.
引用
收藏
页码：96 / 98
页数：3
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