NOISE FEEDBACK IN IMPATT DIODES

被引：0

作者：

EGGEL, H ^{[1
]}

机构：

[1] TECH UNIV MUNICH,INST TECH ELEKT,MUNICH,FED REP GER

来源：

NACHRICHTENTECHNISCHE ZEITSCHRIFT | 1975年 / 28卷 / 01期

关键词：

D O I：

暂无

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：28 / 29

页数：2

共 50 条

[1] NOISE IN SILICON IMPATT DIODES
ARMENCHA, NN
TARKHIN, DV
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 4 (02): : 321 - &
[2] IMPATT DIODES NOISE MEASURE
OKAMOTO, H
IKEDA, M
[J]. REVIEW OF THE ELECTRICAL COMMUNICATIONS LABORATORIES, 1978, 26 (1-2): : 178 - 185
[3] OPTIMUM NOISE MEASURE OF IMPATT DIODES
HAUS, HA
STATZ, H
PUCEL, RA
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1971, MT19 (10) : 801 - +
[4] NONLINEAR NOISE THEORY FOR IMPATT DIODES
KUVAS, RL
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (04) : 395 - 411
[5] NOISE IN IMPATT DIODES - INTRINSIC PROPERTIES
KUVAS, RL
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (02) : 220 - +
[6] NOISE CHARACTERISTICS OF SI IMPATT-DIODES OSCILLATORS
GERSHENZON, EM
LEVITES, AA
SMETANIN, AI
[J]. RADIOTEKHNIKA I ELEKTRONIKA, 1987, 32 (12): : 2623 - 2631
[7] THEORY OF OSCILLATOR NOISE AND ITS APPLICATION TO IMPATT DIODES
FIKART, JL
GOUD, PA
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (05) : 2284 - 2296
[8] IMPATT DIODES
DENOBEL, D
VLAARDINGERBROEK, MT
[J]. PHILIPS TECHNICAL REVIEW, 1971, 32 (9-12): : 328 - 344
[9] EFFECT OF DOPING PROFILE ON AVALANCHE NOISE OF SILICON IMPATT DIODES
VOLLMANN, E
[J]. ELECTRONICS LETTERS, 1973, 9 (25) : 602 - 603
[10] INFLUENCE OF TECHNOLOGICAL PARAMETERS ON FM-NOISE OF IMPATT DIODES
MUNSTER, V
[J]. NACHRICHTENTECHNISCHE ZEITSCHRIFT, 1976, 29 (07): : 549 - 551